3400-3800 MHz, 31 dB, 10 W Avg. Airfast® Power Amplifier Module

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Product Details

Features

  • 2−stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in−package Doherty
  • Thermal path is separated from electrical/solder connection path for enhanced thermal dissipation
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low complexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude
  • RoHS compliant

RF Performance Table

3400–3800 MHz

Typical LTE Performance: Pout = 10 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1)

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Documentation

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2 documents

Design Files

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1 design file

Hardware

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1 hardware offering

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