3400-3800 MHz, 32 dB, 8 W Avg. Airfast® Power Amplifier Module with Autobias Control
The A5M36SG239 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems. The module includes an autobias feature that automatically sets the transistor bias upon power up and an integrated sensor that monitors the temperature. Communications to the module can be accomplished via either I2C or SPI.
Product Details
Features
- 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
- Advanced high performance in-package Doherty
- Fully matched (50 ohm input/output, DC blocked)
- Designed for low complexity digital linearization systems
- Reduced memory effects for improved linearized error vector magnitude
- Autobias on power up
- Temperature sensing
- Digital interface (I2C or SPI)
- Embedded registers and DACs for setting bias conditions
- Tx enable control pin for TDD operation
- RoHS compliant
RF Performance Table
3400-3800 MHz
Typical LTE Performance: Pout = 8 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.1
| Carrier Center Frequency |
Gain (dB) |
ACPR (dBc) |
PAE (%) |
| 3410 MHz | 31.4 | -27.4 | 44.1 |
| 3500 MHz | 31.4 | –26.6 | 44.4 |
| 3600 MHz | 31.7 | –26.2 | 46.3 |
| 3700 MHz | 31.6 | –26.9 | 48.0 |
| 3790 MHz | 31.0 | –27.2 | 47.3 |
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