3400-3800 MHz, 32 dB, 8 W Avg. Airfast® Power Amplifier Module with Autobias Control

A5M36SG239

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Product Details

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Features

  • 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in-package Doherty
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low complexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude
  • Autobias on power up
  • Temperature sensing
  • Digital interface (I2C or SPI)
  • Embedded registers and DACs for setting bias conditions
  • Tx enable control pin for TDD operation
  • RoHS compliant

Part numbers include: A5M36SG239.

RF Performance Table

3400-3800 MHz

Typical LTE Performance: Pout = 8 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.1

Documentation

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Design Resources

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Design Files

1 design file

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