Design Files
3 design files
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Models
A5G37H110N Peaking Class AB S-Parameters
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Models
A5G37H110N Peaking Class C S-Parameters
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Models
A5G37H110N Carrier S-Parameters
This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3600 to 3800 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Select a section:
Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
3600 MHz | 15.1 | 54.1 | 8.1 | -29.5 |
3700 MHz | 15.4 | 53.5 | 8.4 | -31.8 |
3800 MHz | 15.3 | 54.3 | 8.3 | -32.0 |
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