Design Files
3 design files
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Models
A5G37H110N Peaking Class AB S-Parameters
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Models
A5G37H110N Peaking Class C S-Parameters
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Models
A5G37H110N Carrier S-Parameters
3600-3800 MHz, 13.5 W Avg., 48 V Airfast® RF Power GaN Transistor
A5G37H110N Receive alerts
This 13.5 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3600 to 3800 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3600 to 3800 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Product Details
Features
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for low complexity digital linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
RF Performance Table
3700 MHz
Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 70 mA, VGSB = –4.0 Vdc, Pout = 13.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 3600 MHz | 15.1 | 54.1 | 8.1 | -29.5 |
| 3700 MHz | 15.4 | 53.5 | 8.4 | -31.8 |
| 3800 MHz | 15.3 | 54.3 | 8.3 | -32.0 |