1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor

MMRF1316N
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

See product image

Product Details

Features

  • Wide Operating Frequency Range
  • Ruggedness
  • Input and Output Allowing Wide Frequency Range Utilization
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

Part numbers include: MMRF1316N.

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Die Technology
    LDMOS

RF Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc

230 MHz Narrowband

VDD = 50 Vdc

Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

Documentation

Quick reference to our documentation types.

5 documents

Support

What do you need help with?