MW7IC008N|100-1000 MHz, 8 W Peak, 28 V

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MW7IC008N

The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers most narrow bandwidth communication application formats.

See product image

Data Sheet

Application Notes

Product Details

Features

Broadband, Single Matching Network from 20 to 1000 MHz
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13-inch Reel.

RF Performance Table

100-900 MHz

Typical CW Performance: V_DD = 28 Volts, I_DQ1 = 25 mA, I_DQ2 = 75 mA

Frequency	G_ps (dB)	PAE (%)
100 MHz @ 11 W CW	23.5	55
400 MHz @ 9 W CW	22.5	41
900 MHz @ 6.5 W CW	23.5	34

Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW (3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 8 Watts CW Pout @ 900 MHz
Typical Pout @ 1 dB Compression Point ≃ 11 Watts CW @ 100 MHz, 9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

5 documents

Data Sheet
MW7IC008NT1 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier - Data Sheet

PDFRev 3Dec 19, 2013337.2 KBMW7IC008NEnglish
Application Note
PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation - AN3778

PDFRev 0Feb 26, 2010632.0 KBAN3778English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
Application Note
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
Package Information
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

PDFRev BMar 21, 201644.4 KBSOT1664-1English

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
MW7IC008NT1 RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Mar 2, 2012 00:00:003.7 MBMW7IC008N_MDL_AWR

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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
MW7IC008N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:001.5 MBMW7IC008N_MDL_ADS

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Printed Circuit Boards and Schematics
MW7IC008NT1 CAD DXF File

ZIPRev 1aJun 21, 2011 00:00:0033.5 KBMW7IC008N_DXF_PCB

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100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier

Product Details

Features

RF Performance Table

100-900 MHz

Buy/Parametrics

Documentation

Filter by

MW7IC008NT1 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier - Data Sheet

PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation - AN3778

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

Design Resources

Design Files

Filter by

MW7IC008NT1 RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MW7IC008N RF High-Power Model ADS Product Model Design Kit

MW7IC008NT1 CAD DXF File

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