A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
RoHS compliant

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 300 mA, V_GSB = -5.0 Vdc, P_out = 80 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2300 MHz	14.5	53.7	8.4	-30.5
2350 MHz	14.6	52.8	8.3	-30.6
2400 MHz	14.2	53.2	8.1	-31.9

Buy/Parametrics

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N true 0 PSPA3G23H500W17Sen 3 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1

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A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Airfast<sup>®</sup> RF power GaN transistor for cellular base stations.

1620168821469690062224 PSP

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2021-05-04

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet

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A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet

Application Note Application Note 2 2

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This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices.

1075398872032723970051 PSP

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2016-11-09

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

/docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf

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The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP).

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AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

/docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf

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AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

false 0 A3G23H500W17S downloads en true 1 Y PSP Y Y Application Note

2

/docs/en/application-note/AN1955.pdf

2016-11-09

1075398872032723970051 PSP 2

Jul 11, 2024

Application Note

This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices.

None

/docs/en/application-note/AN1955.pdf

English

documents

235468

None

645036621402383989

2025-01-28

N

/docs/en/application-note/AN1955.pdf

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

/docs/en/application-note/AN1955.pdf

documents

645036621402383989

Application Note

N

en

None

Y

pdf

2

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Thermal Characterization Methodology of RF Power Amplifiers - Application Note

235.5 KB

AN1955

N

1075398872032723970051

/docs/en/application-note/AN1908.pdf

2016-10-31

S989356392744 PSP 3

Feb 24, 2011

Application Note

The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP).

None

/docs/en/application-note/AN1908.pdf

English

documents

664592

None

645036621402383989

2024-03-13

N

/docs/en/application-note/AN1908.pdf

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

/docs/en/application-note/AN1908.pdf

documents

645036621402383989

Application Note

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en

None

Y

pdf

1

N

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

664.6 KB

AN1908

N

S989356392744

Data Sheet

1

/docs/en/data-sheet/A3G23H500W17S.pdf

2021-05-04

1620168821469690062224 PSP 1

May 3, 2021

Data Sheet

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Airfast<sup>®</sup> RF power GaN transistor for cellular base stations.

None

/docs/en/data-sheet/A3G23H500W17S.pdf

English

documents

367381

None

980000996212993340

2022-12-07

N

/docs/en/data-sheet/A3G23H500W17S.pdf

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet

/docs/en/data-sheet/A3G23H500W17S.pdf

documents

980000996212993340

Data Sheet

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pdf

1

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A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet

367.4 KB

A3G23H500W17S

N

1620168821469690062224

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Documentation

Quick reference to our documentation types.

3 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet[A3G23H500W17S]

PDFMay 3, 2021Rev 1

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A3G23H500W17S Carrier Class AB S-Parameters

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A3G23H500W17S Peaking Class AB S-Parameters

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A3G23H500W17S Peaking Class C S-Parameters

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Printed Circuit Boards and Schematics
A3G23H500W17S 2600 MHz PCB DXF file

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Design Files - miscellaneous
A3G23H500W17S 2300-2400 MHz Design Files

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2300-2400 MHz, 80 W Avg., 48 V Airfast^® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2300 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet[A3G23H500W17S]

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Design Resources

Design Files

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A3G23H500W17S Carrier Class AB S-Parameters

A3G23H500W17S Peaking Class AB S-Parameters

A3G23H500W17S Peaking Class C S-Parameters

A3G23H500W17S 2600 MHz PCB DXF file

A3G23H500W17S 2300-2400 MHz Design Files

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2300-2400 MHz, 80 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2300 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet[A3G23H500W17S]

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Design Resources

Design Files

Filter by

A3G23H500W17S Carrier Class AB S-Parameters

A3G23H500W17S Peaking Class AB S-Parameters

A3G23H500W17S Peaking Class C S-Parameters

A3G23H500W17S 2600 MHz PCB DXF file

A3G23H500W17S 2300-2400 MHz Design Files

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2300-2400 MHz, 80 W Avg., 48 V Airfast^® RF Power GaN Transistor