2300-2400 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

A3T23H450W23S
The A3T23H450W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

See product image

Product Details

Select a section:

Features

  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    2300
  • Frequency (Max) (MHz)
    2400
  • Supply Voltage (Typ) (V)
    30
  • Peak Power (Typ) (dBm)
    57.5
  • Peak Power (Typ) (W)
    562
  • Die Technology
    LDMOS

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 30 Vdc, IDQA = 650 mA, VGSB = 0.65 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2300 MHz14.747.07.8–30.7
2350 MHz15.146.47.6–31.7
2400 MHz15.246.57.5–33.3

Documentation

Quick reference to our documentation types.

Filters

5 documents

Design Resources

Select a section:

Design Files

Filters

4 design files

Support

What do you need help with?

  • Narrow your search
Search