This A5G26H605W19N 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.4 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
| Frequency | Gps (dB) | ηD (%) | Output PAR (dB) | ACPR (dBc) |
| 2620 MHz | 15.1 | 52.5 | 8.4 | –30.0 |
| 2655 MHz | 15.3 | 52.3 | 8.2 | –31.0 |
| 2690 MHz | 15.0 | 52.1 | 8.1 | –32.0 |
|
|
|
|
|
|
|
|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
4 design files
Receive the full breakdown. See the product footprint and more in the eCad file.
