2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

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The MRF6S27160HR6 is designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications.

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Data Sheet

Product Details

Features

Typical Single–Carrier N–CDMA Performance: V_DD = 28 Volts, I_DQ = 1800 mA, Pout = 35 Watts Avg., f = 2660 MHz, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain: 14.6 dB

Drain Efficiency: 22.6%

ACPR @ 885 kHz Offset: –47.8 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
RoHS Compliant
In Tape and Reel. R6 suffix = 150 Units per 56 mm, 13 inch Reel.

Documentation

Quick reference to our documentation types.

2 documents

^{Data Sheet}
MRF6P27160HR6 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

PDFRev 2Dec 29, 2008498.9 KBMRF6P27160HEnglish
^{Package Information}
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

PDFRev HOct 25, 2019159.0 KBSOT1787-1English

Design Resources

Design Files

5 design files

^Models
MRF6P27160H RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:00965.6 KBMRF6P27160H_MDL_AWR

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^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT

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^Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT

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^Models
MRF6P27160H RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00415.3 KBMRF6P27160H_MDL_ADS

Download
^Calculators
MRF6P27160HR6 RF Power Electromigration MTTF Calculation Program

XLSRev 2Aug 1, 2007 00:00:0044.0 KBMRF6P27160H_MTTF_CALC

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2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

Product Details

Features

Documentation

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MRF6P27160HR6 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins

Design Resources

Design Files

Filter by

MRF6P27160H RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF6P27160H RF High-Power Model ADS Product Model Design Kit

MRF6P27160HR6 RF Power Electromigration MTTF Calculation Program

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