Documentation
Quick reference to our documentation types.
2 documents
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Package Information
98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins
2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET
MRF6P27160HR6 Receive alerts
The MRF6S27160HR6 is designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications.
RF ISO 375D image
Product Details
Features
- Typical Single–Carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 35 Watts Avg., f = 2660 MHz, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
- Power Gain: 14.6 dB
- Drain Efficiency: 22.6%
- ACPR @ 885 kHz Offset: –47.8 dBc in 30 kHz Bandwidth
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW Output Power
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
- RoHS Compliant
- In Tape and Reel. R6 suffix = 150 Units per 56 mm, 13 inch Reel.
Design Resources
Design Files
5 design files
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Models
MRF6P27160H RF High-Power Model AWR Product Model Design Kit
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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.
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Models
MRF6P27160H RF High-Power Model ADS Product Model Design Kit
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Calculators
MRF6P27160HR6 RF Power Electromigration MTTF Calculation Program