1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor

MMRF1316N

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Product Details

Features

  • Wide Operating Frequency Range
  • Ruggedness
  • Input and Output Allowing Wide Frequency Range Utilization
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Die Technology
    LDMOS

RF Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc

230 MHz Narrowband

VDD = 50 Vdc

Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

Design Resources

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Documentation

Quick reference to our documentation types.

5 documents

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