1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor

MMRF1316N
This high ruggedness device, MMRF1316NR1, is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design allowing wide frequency range utilization, between 1.8 and 600 MHz.

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Product Details

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Features

  • Wide Operating Frequency Range
  • Ruggedness
  • Input and Output Allowing Wide Frequency Range Utilization
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Die Technology
    LDMOS

RF Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
87.5-108(1,3)CW36123.880.1

230 MHz Narrowband

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
230(2)CW30025.070.0
230(2)Pulse (100 µsec,
20% Duty Cycle)		300 Peak27.071.0

Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
98(1)CW> 65:1
at all Phase
Angles		3
(3 dB
Overdrive)		50No
Device
Degradation
230(2)Pulse
(100 µsec,
20% Duty Cycle)		1.16 Peak
(3 dB
Overdrive)
1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

Design Resources

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