OM7885: BGU8M1 LTE LNA evaluation board

Overview

Target Applications

  1. " LNA for LTE in smart phones, feature phones and tablet applications "
BGU8x1 LNA evaluation board

Functional diagram of the kit  

BGU8x1 LNA evaluation board

BGU8x1 LNA evaluation board  

Specifications

Supported Devices

RF

  • BGU8M1 : SiGe:C Low Noise Amplifier MMIC for LTE

MoreLess

Technical and Functional Specifications

Power Management
  • The BGU8M1 is optimized for 1805 MHz to 2200 MHz
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low supply current of 5 mA
  • Power-down mode current consumption < 1 µA
  • Requires only one input matching inductor and one supply decoupling capacitor
  • ESD protection on all pins (HBM > 2 kV)
  • Input and output DC decoupled
Size 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
  • 180 GHz transit frequency - SiGe:C technology
  • Integrated matching for the output
  • Integrated temperature stabilized bias for easy design
  • Noise figure (NF) = 0.9 dB
  • Gain = 13 dB
  • High input 1 dB compression point of -2 dBm
  • High out of band IP3i of 6 dBm

Buy

  • OM7885   Active

  • BGU8M1 LTE LNA evaluation board
    • BGU8M1 LNA evaluation board in ESD safe packing
    • OM7885/BGU8M1/LNUL
    • 1 @ US
    • $160.00
1579109330588723448640

Design Resources

Documents   ( 1 )

Design Resources   ( 1 )

Documents

Application Note  ( 1 )

Design Resources

Design Tools & Files  ( 1 )

Printed Circuit Boards and Schematics  ( 1 )