BGU8M1 LTE LNA evaluation board

Roll over image to zoom in

Product Details

Supported Devices

RF

LNAs for LTE

Features

Power Management

  • The BGU8M1 is optimized for 1805 MHz to 2200 MHz
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low supply current of 5 mA
  • Power-down mode current consumption < 1 µA
  • Requires only one input matching inductor and one supply decoupling capacitor
  • ESD protection on all pins (HBM > 2 kV)
  • Input and output DC decoupled

Size

  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
  • 180 GHz transit frequency - SiGe:C technology
  • Integrated matching for the output
  • Integrated temperature stabilized bias for easy design
  • Noise figure (NF) = 0.9 dB
  • Gain = 13 dB
  • High input 1 dB compression point of -2 dBm
  • High out of band IP3i of 6 dBm

Buy Options

  • OM7885

  • BGU8M1 LTE LNA evaluation board.

  • $160.00 USD
  • For a quantity of 1

Design Resources

Select a section:

Documentation

Quick reference to our documentation types.

1 documents

Design Files

1 design file

Support

What do you need help with?