BGU8M1UK LTE LNA evaluation board

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Product Details

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Features

  • Noise figure (NF) = 0.80 dB
  • Gain = 16 dB
  • High input 1 dB compression point of -4 dBm
  • High out of band IP3i of 2 dBm

Power Management

  • The BGU8M1UK is optimized for 1805 MHz to 2200 MHz
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low 5 mA supply current
  • Power-down mode current consumption < 1 µA
  • ESD protection on all pins (HBM > 2 kV)
  • Requires only one input matching inductor, input DC blocking capacitor, and one supply decoupling capacitor
  • Input and output DC decoupled

Size

  • 0.65 mm x 0.44 mm x 0.2 mm; 0.22 mm pitch
  • 180 GHz transit frequency - SiGe:C technology
  • Integrated matching for the output
  • Integrated temperature stabilized bias for easy design

Buy Options

  • OM7898

  • BGU8M1UK LTE LNA evaluation board.

  • $160.00 USD
  • For a quantity of 1

Design Resources

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Design Files

1 design file

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