Demoboard for BGS8H2 LTE LNA

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Product Details

Supported Devices

RF

LNAs for LTE

Features

The BGS8H2 is optimized for 2300 MHz to 2690 MHz

  • Noise figure (NF) = 1.1 dB
  • Gain 12.5 dB
  • Bypass switch insertion loss of 2.3 dB
  • High input 1 dB compression point of -1.5 dBm
  • High out of band IP3i of 4 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low 5.8 mA supply current
  • Power-down mode current consumption < 1 µA
  • Integrated temperature stabilized bias for easy design
  • Requires only one input matching inductor and one supply decoupling capacitor
  • Input and output DC decoupled
  • ESD protection on all pins (HBM > 2 kV)
  • Integrated matching for the output
  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
  • 180 GHz transit frequency - SiGe:C technology

Buy Options

  • OM17007

  • Demoboard for BGS8H2 LTE LNA.

  • $160.00 USD
  • For a quantity of 1

Design Resources

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Design Files

1 design file

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