Demoboard for BGS8M2 LTE LNA

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Product Details

Supported Devices

RF

LNAs for LTE

Features

  • The BGS8M2 is optimized for 1805 MHz to 2200 MHz
  • Noise figure (NF) = 0.9 dB
  • Gain 14.4 dB
  • Bypass switch insertion loss of 2.2 dB
  • High input 1 dB compression point of -3.5 dBm
  • High out of band IP3i of 3.5 dBm
  • 180 GHz transit frequency - SiGe:C technology

Connectivity

  • Input and output DC decoupled
  • Integrated matching for the output

Power Management

  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low 5.8 mA supply current
  • Power-down mode current consumption < 1 µA
  • Requires only one input matching inductor and one supply decoupling capacitor
  • Integrated temperature stabilized bias for easy design

Size

  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232

Buy Options

  • OM17006

  • Demoboard for BGS8M2 LTE LNA.

  • $160.00 USD
  • For a quantity of 1

Design Resources

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Design Files

1 design file

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