SiGe:C Low Noise Amplifier MMIC for LTE

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Product Details

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Features

  • Operating frequency from 728 MHz to 960 MHz
  • Noise figure = 0.7 dB
  • Gain = 14 dB
  • High input 1 dB compression point of -3 dBm
  • High in band IP3i of 2 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Self-shielding package concept
  • Integrated supply decoupling capacitor
  • Optimized performance at a supply current of 4.6 mA
  • Power-down mode current consumption < 1 μA
  • Integrated temperature stabilized bias for easy design
  • Require only one input matching inductor
  • Output DC decoupled
  • ESD protection on all pins (HBM > 2 kV)
  • Integrated matching for the output
  • Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
  • 180 GHz transit frequency - SiGe:C technology
  • Moisture sensitivity level of 1

Target Applications

  • LNA for LTE reception in smart phones
  • Feature phones
  • Tablet PCs
  • RF front-end modules

Design Resources

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Documentation

Quick reference to our documentation types.

3 documents

Design Files

1 design file

Hardware

1 hardware offering

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