SiGe:C Low Noise Amplifier MMIC with Bypass Switch for LTE

LTE3401H

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Product Details

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Features

  • Operating frequency from 1452 MHz to 2690 MHz
  • Noise figure = 0.65 dB
  • Gain 19.5 dB
  • High input 1 dB compression point of -10.5 dBm
  • High in band IP3i of +2 dBm
  • Bypass switch insertion loss of 2.7 dB
  • Supply voltage 1.5 V to 3.1 V
  • Integrated RF supply decoupling capacitor
  • Optimized performance at a supply current of 13.4 mA
  • Bypass mode current consumption < 1 μA
  • Integrated temperature stabilized bias for easy design
  • Requires only one input matching inductor
  • Input and Output AC coupled through DC blocking capacitors
  • Integrated matching for the output
  • ESD protection on all pins
  • Low bill of materials (BOM)
  • 6 pins leadless package: 1.1 mm x 0.7 mm x 0.37 mm: 0.40 mm pitch
  • 180 GHz transit frequency - SiGe:C technology
  • Moisture sensitivity Level 1
  • LNA for LTE reception in smartphones
  • Feature phones
  • Tablet PCs
  • RF front-end modules

Design Resources

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Documentation

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2 documents

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