Design Files
2 design files
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Models
MMZ25332BT1 S-Parameters
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Printed Circuit Boards and Schematics
QFN 3x3-12H CAD DXF File
1500-2800 MHz, 26.5 dB, 33 dBm InGaP HBT
MMZ25332B Receive alerts
The MMZ25332BT1 is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides high linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 22 dBm, covering frequencies from 1500-2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost-effective, surface mount QFN 3 x 3 package. The device offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.
QFN 3 x 3 Package Image
Product Details
Features
- Frequency: 1500-2800 MHz
- P1dB: 33 dBm @ 2500 MHz
- Power Gain: 26.5 dB @ 2500 MHz
- OIP3: 48 dBm @ 2500 MHz
- EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
- Active Bias Control (adjustable externally)
- Power Down Control via VBIAS Pin
- Class 3A HBM ESD Rating
- Single 3 to 5 V Supply
- Single-ended Power Detector
- Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
- RoHS Compliant
- In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.
RF Performance Table
W-CDMA, LTE Performance
Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA| Frequency | Pout (dBm) |
Gps (dB) |
ACPR (dBc) |
PAE (%) |
Test Signal |
| 2140 MHz | 22 | 27.0 | –50.0 | 7.0 | W-CDMA |
| 2620 MHz | 21 | 26.0 | –50.0 | 5.0 | LTE 20 MHz |
Documentation
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