NPN Wideband Silicon RF Transistor

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Product Details

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  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
  • Maximum stable gain 21 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators


Quick reference to our documentation types.

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Design Resources

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Design Files

5 design files

  • Models

    BFU550: S-Parameters 40 MHz - 6 GHz

  • Models

    BFU550: S-parameters and Noise Figure 400 MHz - 2 GHz

  • Models

    BFU5xx family SPICE GP model v2

  • Design Files - miscellaneous

    BFU5XX family ADS design kit v2

  • Design Files - miscellaneous

    Installation manual for NXP® BFU5XX family ADS_design kit v2



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