NPN Wideband Silicon RF Transistor

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Product Details


  • Low noise, high linearity, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
  • Maximum stable gain 15.5 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise, high linearity amplifiers for ISM applications
  • Automotive applications (e.g., antenna amplifiers)

Part numbers include: BFU580Q, BFU580G.


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