2496-2690 MHz, 26 dBm Avg., 48 V Airfast® RF Power LDMOS Transistor

A3V26S004N
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  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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This A3V26S004N 26 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.

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RF Performance Table

2600 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 42 Vdc, IDQ = 17 mA, Pout = 23.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2515 MHz23.215.110.3-35.0
2595 MHz23.015.59.6-37.0
2675 MHz22.014.89.3-37.7
1. All data measured in reference circuit with device soldered to printed circuit board.

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