100-3600 MHz, 1.26 W Avg., 28 V Airfast® RF Power LDMOS Transistor

  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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Features

  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Universal Broadband Driven Device with Internal RF Feedback
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.

Part numbers include: AFT27S010N.

RF Performance Tables

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

2300 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

2600 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

3500 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)1. All data measured in fixture with device soldered to heatsink.

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Documentation

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Design Files

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