MRF8P20161H: 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Overview

Features

NI-780S-4 Package Image

NI-780S-4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1880
  • Frequency (Max) (MHz)
    1920
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    49.9
  • P1dB (Typ) (W)
    97
  • P3dB (Typ) (dBm)
    51.7
  • P3dB (Typ) (W)
    147
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    37.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.4 @ 1920
  • Efficiency (Typ) (%)
    45.8
  • Thermal Resistance (Spec) (℃/W)
    0.76
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

1880-1920 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz16.546.26.9–27.9
1900 MHz16.546.06.9–29.1
1920 MHz16.445.87.0–30.4
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1900 MHz, 142 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 3 dB Compression Point 147 Watts CW