A2T21S260-12S: 2110-2170 MHz, 65 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-780S-2L2L Package Image

NI-780S-2L2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2110
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    53.2
  • P1dB (Typ) (W)
    208
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    65.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    18.7 @ 2170
  • Efficiency (Typ) (%)
    30.6
  • Thermal Resistance (Spec) (℃/W)
    0.28
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1200 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz18.530.46.9–32.6–17
2140 MHz18.630.36.8–32.8–13
2170 MHz18.730.66.8–32.0–11