A2G35S200-01S: 3400-3600 MHz, 40 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-400S-2S Package Image

NI-400S-2S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    3400
  • Frequency (Max) (MHz)
    3600
  • Supply Voltage (Typ) (V)
    48
  • P1dB (Typ) (dBm)
    52.6
  • P1dB (Typ) (W)
    180
  • P3dB (Typ) (dBm)
    53.5
  • P3dB (Typ) (W)
    225
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    40.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.1 @ 3500
  • Efficiency (Typ) (%)
    35.3
  • Thermal Resistance (Spec) (℃/W)
    1.3
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    GaN
.

RF Performance Table

3500 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 291 mA, Pout = 40 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
3400 MHz14.732.47.2–34.9–10
3500 MHz16.135.37.0–34.7–19
3600 MHz16.136.76.6–32.8–9