MHE1003N: 2450 MHz, 220 W CW, 26 V RF LDMOS Transistor for Consumer and Commercial Cooking

Overview

Features

OM-780-2L Package Image

OM-780-2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2450
  • Frequency (Max) (MHz)
    2450
  • Supply Voltage (Typ) (V)
    26
  • P1dB (Typ) (dBm)
    53.1
  • P1dB (Typ) (W)
    206
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    220.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    14.1 @ 2450
  • Efficiency (Typ) (%)
    63.5
  • Thermal Resistance (Spec) (℃/W)
    0.24
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

VDD = 26 Vdc, IDQ = 50 mA
Frequency
(MHz)
Signal Type Gps
(dB)
PAE
(%)
Pout
(W)
2400CW14.061.5230
245013.962.0224
250011.561.8214

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450CW> 10:1
at all Phase Angles
20
(3 dB Overdrive)
28No Device Degradation