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RDGD3160I3PH5EVB
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3 Phase Reference Design for HP Drive Featuring GD3160.
Three phase reference design evaluation kit featuring GD3160 gate drive devices for IGBT or SiC MOSFET
Kit Contains
- Quick Start Guide
3 Phase Reference Design for HP Drive Featuring GD3160
The RDGD3160I3PH5EVB is a three-phase inverter reference design and evaluation board populated with six GD3160 gate drivers for IGBT/SiC MOSFET devices. This board supports SPI daisy chain communication for programming and communication with three high-side gate drivers and three low-side gate drivers independently and comes with fault management and supporting circuitry.
The evaluation kit is designed to connect to a compatible HybridPACK™ Drive SIC/IGBT module or onsemi VE-trac™ IGBT module for full three phase inverter applications development.
Product Details
Supported Devices
Power Management
Powertrain and Engine Control
- GD3160: Advanced High Voltage Isolated Gate Driver with Segmented Drive for SiC MOSFETs
System Basis Chips
- FS6500: Grade 1 and Grade 0 Safety Power System Basis Chip with CAN Flexible Data Transceiver
Processors and Microcontrollers
Ultra-Reliable MPC57xx MCUs
- MPC5777C: Ultra-Reliable MPC5777C MCU for Automotive and Industrial Engine Management
Interfaces
3.3 V / 5 V IO CAN Transceivers
- TJA1042: High-Speed CAN Transceiver with Standby Mode
Features
Gate Driver
- Integrated Galvanic signal isolation (up to 8 kV)
- High gate current integrated: 15 A source/sink capable
- SPI interface for safety monitoring, configuration and diagnostic reporting
- Fail-safe state management from LV and HV domain for user-selectable safe state
- Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
- Configurable desaturation and current sense optimized for protecting SiC and IGBTs
- Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
- Integrated ADC for monitoring parameters from HV domain
- CMTI > 100 V/ns
- Available in 5.0 or 3.3 V logic interface variants
- Certified compliant with ISO 26262, supporting ASIL D level functional safety
GD3160
- Advanced single channel gate driver for IGBT and SiC MOSFETs. Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control
Buy Options
Documentation
Quick reference to our documentation types.
Design Resources
Design Files
Quick reference to our
design files types.
2 design files
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Printed Circuit Boards and Schematics
RDGD3160I3PH5EVB Design files
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Printed Circuit Boards and Schematics
RDGD3160I3PH5EVB Schematics