MWE6IC9100N|865-960 MHz, 100 W, 26 V

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No Longer Manufactured
MWE6IC9100N

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The MWE6IC9100NR1 and MWE6IC9100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 865 to 960 MHz. These multi-stage structures are rated for 26 to 32 Volt operation and cover all typical cellular base station modulation formats.

Data Sheet

Application Notes

Documentation

Quick reference to our documentation types.

1-5 of 11 documents

^{Data Sheet}
MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier

PDFRev 6Oct 31, 20111.1 MBMWE6IC9100N-2English
^{Data Sheet}
MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier

PDFRev 4.1Oct 31, 20111.1 MBMWE6IC9100N-1English
^{Application Note}
AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

PDFRev 1Apr 29, 2014112.4 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^{Application Note}
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Jun 7, 20068.3 MBAN3263English
^{Application Note}
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

PDFRev 1May 12, 2004140.7 KBAN1987English
^{Application Note}
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

PDFRev 0Oct 9, 2003134.6 KBAN1977English
^{Package Information}
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins

PDFRev BMar 18, 201672.7 KBSOT1720-2English
^{Package Information}
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins

PDFRev BFeb 26, 201671.4 KBSOT1721-1English
^{White Paper}
Advances in Airfast RFICs White Paper

PDFRev 0May 15, 2015149.2 KBAIRFASTWBFWPEnglish

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Design Resources

Design Files

3 design files

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
MWE6IC9100NBR1, MWE6IC9100NR1 RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 20191.8 MBMWE6IC9100N_MDL_ADS
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^Calculators
MWE6IC9100NBR1, MWE6IC9100NR1 RF Power Electromigration MTTF Calculation Program

XLSRev 1Feb 12, 200744.5 KBMWE6IC9100N_MTTF_CALC
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865-960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Amplifiers

Documentation

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MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier

MWE6IC9100NR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier

AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins

98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins

Advances in Airfast RFICs White Paper

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MWE6IC9100NBR1, MWE6IC9100NR1 RF High-Power Model ADS Product Model Design Kit

MWE6IC9100NBR1, MWE6IC9100NR1 RF Power Electromigration MTTF Calculation Program

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