MWE6IC9100N|865-960 MHz, 100 W, 26 V

Overview

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MWE6IC9100NR1 in Lifetime Buy. Last Order Date: 01 Jul 2011. Last Ship Date: 30 Jun 2012. View replacement parts via Part Number Search.

The MWE6IC9100NR1 and MWE6IC9100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 865 to 960 MHz. These multi-stage structures are rated for 26 to 32 Volt operation and cover all typical cellular base station modulation formats.

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Features

Final Application

Typical GSM Performance: V_DD = 26 Volts, I_DQ1 = 120 mA, I_DQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz
Power Gain: 33.5 dB

Power Added Efficiency: 54%

GSM EDGE Application

Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ1 = 230 mA, I_DQ2 = 870 mA, Pout = 50 Watts Avg., Full Frequency Band (869–960 MHz)

Power Gain: 35.5 dB

Power Added Efficiency: 39%

Spectral Regrowth @ 400 kHz Offset = –63 dBc

Spectral Regrowth @ 600 kHz Offset = –81 dBc

EVM: 2% rms
Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 120 W CW Pout.
Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MoreLess

Features

Final Application

Typical GSM Performance: V_DD = 26 Volts, I_DQ1 = 120 mA, I_DQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz
Power Gain: 33.5 dB

Power Added Efficiency: 54%

GSM EDGE Application

Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ1 = 230 mA, I_DQ2 = 870 mA, Pout = 50 Watts Avg., Full Frequency Band (869–960 MHz)

Power Gain: 35.5 dB

Power Added Efficiency: 39%

Spectral Regrowth @ 400 kHz Offset = –63 dBc

Spectral Regrowth @ 600 kHz Offset = –81 dBc

EVM: 2% rms
Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 120 W CW Pout.
Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Data Sheets

Application Notes

TO-272 WB-14, TO-270 WB-14 Package Image

TO-272 WB-14, TO-270 WB-14 Package Image

TO-272 WB-14, TO-270 WB-14 Package Image

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MWE6IC9100N: 865-960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Amplifiers ARCHIVED

Overview

Features

Features

TO-272 WB-14, TO-270 WB-14 Package Image

TO-272 WB-14, TO-270 WB-14 Package Image