1805-2200 MHz, 49 dB, 16 W Avg. Airfast® Power Amplifier Module

A5M20TG042 new

Roll over image to zoom in

Product Details

Features

  • 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in-package Doherty
  • Fully matched (50 ohm input/output, DC blocked)
  • Reduced memory effects for improved linearized error vector magnitude
  • Simultaneous dual band operation (B3–B1/B66)

Part numbers include: A5M20TG042.

RF Performance Table

1805–2200 MHz

Typical LTE Performance: Pout = 16 W Avg., VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc, 1 x 20 MHz LTE, input PAR = 8 dB @ 0.01% probability on CCDF.(1)

Carrier center
frequency
Gain
(dB)
ACPR
(dBc)
PAE
(%)
1815 MHz 47.7 -27.1 43.5
2000 MHz 49.1 -31.8 43.5
2190 MHz 48.3 -33.4 42.7

1. All data measured with device soldered to NXP reference circuit.

Documentation

Quick reference to our documentation types.

2 documents

Design Resources

Design Files

1 design file

Support

What do you need help with?