1805-2200 MHz, 49 dB, 16 W Avg. Airfast® Power Amplifier Module

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Features

  • 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in-package Doherty
  • Fully matched (50 ohm input/output, DC blocked)
  • Reduced memory effects for improved linearized error vector magnitude
  • Simultaneous dual band operation (B3–B1/B66)

RF Performance Table 1805–2200 MHz

Typical LTE Performance: Pout = 16 W Avg., VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc, 1 x 20 MHz LTE, input PAR = 8 dB @ 0.01% probability on CCDF.(1)

Carrier center frequency Gain (dB) ACPR (dBc) PAE (%)
1815 MHz 47.7 -27.1 43.5
2000 MHz 49.1 -31.8 43.5
2190 MHz 48.3 -33.4 42.7

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N true 0 PSPA5M20TG042en 2 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English A5M20TG042 1805-2200 MHz, 49 dB, 16 W Avg Airfast<sup>&reg;</sup> power amplifier module designed for wireless infrastructure applications, including TDD and FDD 32T mMIMO systems. 1716510347555712385291 PSP 662.2 KB None None documents None 1716510347555712385291 /docs/en/data-sheet/A5M20TG042.pdf 662188 /docs/en/data-sheet/A5M20TG042.pdf A5M20TG042 documents N N 2024-05-23 A5M20TG042 1805-2200 MHz, 49 dB,16 W Avg Data Sheet /docs/en/data-sheet/A5M20TG042.pdf /docs/en/data-sheet/A5M20TG042.pdf Data Sheet N 980000996212993340 2024-06-01 pdf N en May 20, 2024 980000996212993340 Data Sheet Y N A5M20TG042 1805-2200 MHz, 49 dB,16 W Avg Data Sheet Application Note Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note false 0 A5M20TG042 downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 Data Sheet 1 /docs/en/data-sheet/A5M20TG042.pdf 2024-05-23 1716510347555712385291 PSP 1 May 20, 2024 Data Sheet A5M20TG042 1805-2200 MHz, 49 dB, 16 W Avg Airfast<sup>&reg;</sup> power amplifier module designed for wireless infrastructure applications, including TDD and FDD 32T mMIMO systems. None /docs/en/data-sheet/A5M20TG042.pdf English documents 662188 None 980000996212993340 2024-06-01 N /docs/en/data-sheet/A5M20TG042.pdf A5M20TG042 1805-2200 MHz, 49 dB,16 W Avg Data Sheet /docs/en/data-sheet/A5M20TG042.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A5M20TG042 1805-2200 MHz, 49 dB,16 W Avg Data Sheet 662.2 KB A5M20TG042 N 1716510347555712385291 true Y Products

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