Design Files
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SiGe:C Low-Noise Amplifier MMIC with Bypass Switch for LTE
- This page contains information on a product that is not recommended for new designs.
The BGS8H2 is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8H2 requires one external matching inductor.
The BGS8H2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8H2 can be switched off to operate in bypass mode at a 1 µA current, to lower power consumption.
The BGS8H2 is optimized for 2300 MHz to 2690 MHz.
6-Pin Leadless Package
Product Details
Features
- Operating frequency from 2300 MHz to 2690 MHz
- Noise figure (NF) = 1.0 dB
- Gain 12.5 dB
- Bypass switch insertion loss of 2.3 dB
- High input 1 dB compression point of -1.5 dBm
- High in band IP3i of 4 dBm
- Supply voltage 1.5 V to 3.1 V
- Self shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 5.8 mA
- Power-down mode current consumption < 1 µA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Input and output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level of 1
Target Applications
- LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules
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Documentation
Quick reference to our documentation types.
4 documents
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Application Note
BGS8H2 LTE LNA with bypass switch evaluation board
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Supporting Information
Solderlayout SOT1232
