SiGe:C Low Noise Amplifier MMIC for LTE

Overview

The BGU8M1 is, also known as the LTE1001M, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8M1 requires one external matching inductor.

The BGU8M1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 13 dB gain at a noise figure of 0.8 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity.

The BGU8M1 is optimized for 1805 MHz to 2200 MHz.

Features

Operating frequency from 1805 MHz to 2200 MHz
Noise figure = 0.8 dB
Gain = 13 dB
High input 1 dB compression point of -2 dBm
High in band IP3_i of 6 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5 mA
Power-down mode current consumption < 1 μA
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1

Target Applications

LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules

Features

Operating frequency from 1805 MHz to 2200 MHz
Noise figure = 0.8 dB
Gain = 13 dB
High input 1 dB compression point of -2 dBm
High in band IP3_i of 6 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5 mA
Power-down mode current consumption < 1 μA
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1

Target Applications

LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules

OM7885:BGU8M1 LTE LNA evaluation board

Evaluation and Development Boards

BGU8M1: SiGe:C Low Noise Amplifier MMIC for LTE

Overview

Features

Target Applications

Target Applications

sot1232_3d

sot1232_3d

Development Boards and Designs

Development Boards and Designs