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Data Sheet
SiGe:C low-noise amplifier MMIC for LTE
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Application Note
BGU8M1 LTE LNA evaluation board
SiGe:C Low Noise Amplifier MMIC for LTE
BGU8M1 Receive alerts
The BGU8M1 is, also known as the LTE1001M, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8M1 requires one external matching inductor.
The BGU8M1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 13 dB gain at a noise figure of 0.8 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity.
The BGU8M1 is optimized for 1805 MHz to 2200 MHz.
6-Pin Leadless Package
Product Details
Features
- Operating frequency from 1805 MHz to 2200 MHz
- Noise figure = 0.8 dB
- Gain = 13 dB
- High input 1 dB compression point of -2 dBm
- High in band IP3i of 6 dBm
- Supply voltage 1.5 V to 3.1 V
- Self-shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 5 mA
- Power-down mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level 1
Target Applications
- LNA for LTE reception in smart phones
- Feature phones
- Tablet PCs
- RF front-end modules
Design Resources
Design Files
1 design file
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Models
S-parameters BGU8M1
Hardware
1 hardware offering
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Evaluation and Development BoardsBGU8M1 LTE LNA evaluation board