SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

Overview

The BGS8L2 is, also known as the LTE3001L, a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8L2 requires one external matching inductor.

The BGS8L2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8L2 can be switched off to operate in bypass mode at a 1 µA current, to lower power consumption.

The BGS8L2 is optimized for 728 MHz to 960 MHz.

Features

Operating frequency from 728 MHz to 960 MHz
Noise figure = 0.85 dB
Gain 13 dB
High input 1 dB compression point of -1 dBm
Bypass switch insertion loss of 1.9 dB
IP3_i of 1.5 dBm
Supply voltage 1.5 V to 3.1 V
Self shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.2 mA
Power-down mode current consumption < 1 µA
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level of 1

Target Applications

LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules

Features

Operating frequency from 728 MHz to 960 MHz
Noise figure = 0.85 dB
Gain 13 dB
High input 1 dB compression point of -1 dBm
Bypass switch insertion loss of 1.9 dB
IP3_i of 1.5 dBm
Supply voltage 1.5 V to 3.1 V
Self shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.2 mA
Power-down mode current consumption < 1 µA
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level of 1

Target Applications

LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules

OM17005:BGS8L2 LTE LNA with bypass switch evaluation board

Evaluation and Development Boards

BGS8L2: SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

Overview

Features

Target Applications

Target Applications

sot1232_3d

sot1232_3d

Development Boards and Designs

Development Boards and Designs