Radio Frequency
RF Discrete Components – Low Power
RF Wideband Transistors
- <2 GHz RF Wideband Transistors
- 6 - 18 GHz Wideband Transistor
<2 GHz RF Wideband Transistors
- BFT25
- BFT25A
- BFU520
- BFU520A
- BFU520W
- BFU520X
- BFU520XR
- BFU520Y
- BFU530
- BFU530A
- BFU530W
- BFU530X
- BFU530XR
- BFU550
- BFU550A
- BFU550W
- BFU550X
- BFU550XR
- BFU580
- BFU590
- BFU590Q
- PBR941
- PRF947
- OM7960
BFU520Y

BFU520Y: Dual NPN wideband silicon RF transistor

Overview

Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.

The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

Features

Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF_min) = 0.65 dB at 900 MHz
Maximum stable gain 19 dB at 900 MHz
11 GHz f_T silicon technology

Target Applications

Applications requiring high supply voltages and high breakdown voltages
Broadband differential amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators

Features

Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF_min) = 0.65 dB at 900 MHz
Maximum stable gain 19 dB at 900 MHz
11 GHz f_T silicon technology

Target Applications

Applications requiring high supply voltages and high breakdown voltages
Broadband differential amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators

SOT363

SOT363

SOT363

.