Dual-NPN Wideband Silicon RF Transistor

BFU520Y

Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.

The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

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Product Details

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Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
  • Maximum stable gain 19 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband differential amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators

Design Resources

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