Dual-NPN Wideband Silicon RF Transistor

BFU520Y

Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.

The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

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Product Details

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Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
  • Maximum stable gain 19 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband differential amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators

Documentation

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Design Resources

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Design Files

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5 design files

  • Models

    BFU520Y: S-parameters 40 MHz - 6 GHz

    ZIPRev 1.0Jun 6, 2012104.7 KBBFU520Y_SPAR
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  • Models

    BFU5xx family SPICE GP model v2

    ZIPRev 1.0Aug 1, 201413.0 KBBFU5XX_FAMILY_SPICE_GP_V2_1
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  • Models

    BFU520Y: S-Parameters and Noise Figure 400 MHz - 2 GHz

    ZIPRev 1.0Jun 6, 20182.3 KBBFU520Y_SPAR_NF
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  • Design Files - miscellaneous

    BFU5XX family ADS design kit v2

    ZIPRev 1.0Aug 1, 2014182.0 KBBFU5XX_FAMILY_ADS_DESIGN_KIT_V2
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  • Design Files - miscellaneous

    Installation manual for NXP® BFU5XX family ADS_design kit v2

    PDFRev 1.0Aug 1, 2014221.0 KBINSTALLATION_MANUAL_FOR_BFU5XX
    Download

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