NPN Wideband Silicon Germanium RF Transistor

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Product Details


  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.7 dB at 5.8 GHz
  • High maximum stable gain 27 dB at 1.8 GHz
  • 110 GHz fT silicon germanium technology

Target Applications

  • 2nd LNA stage and mixer stage in DBS LNB’s
  • Satellite radio
  • Low noise amplifiers for microwave communications systems
  • WLAN and CDMA applications
  • Analog/digital cordless applications
  • Ka band oscillators DRO’s

Part numbers include: BFU725F.


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