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The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 1300 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

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Data Sheet

Application Notes

Product Details

Features

On-chip matching (50 ohm input, DC blocked)
Integrated quiescent current temperature compensation with enable/disable function
Designed for digital predistortion error correction systems
Optimized for Doherty applications
RoHS compliant

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQ1(A+B) = 46 mA, I_DQ2(A+B) = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
920 MHz	34.4	19.9	–45.0
940 MHz	34.5	20.0	–44.6
960 MHz	34.3	19.8	–44.3

700 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQ1(A+B) = 50 mA, I_DQ2(A+B) = 150 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
728 MHz	30.9	19.6	–44.7
748 MHz	31.1	19.5	–45.5
768 MHz	31.2	19.3	–46.2

Buy/Parametrics

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Documentation

Quick reference to our documentation types

7 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

A2I09VD030N 575-1300 MHz, 4 W Avg, 48 V Data Sheet[A2I09VD030N]

PDFOct 13, 2022Rev 2

98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins[SOT1722-3]

PDFMar 11, 2016Rev A
98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins[SOT1722-1]

PDFFeb 15, 2016Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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1-5of 7 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

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Models
A2I09VD030N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 2016 00:00:005.51 MBA2I09VD030N_MDL_AWR

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Models
A2I09VD030N, A2I09VD030GN S-Parameters

S2PRev 0Dec 16, 2016 18:02:0015.42 KBA2I09VD030N-SP

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Models
A2I09VD030N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:001.13 MBA2I09VD030N_MDL_ADS

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Printed Circuit Boards and Schematics
A2I09VD030N PCB DXF file

ZIPRev 1Dec 16, 2016 19:52:00797.84 KBA2I09VD030N-PCB

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Calculators
A2I09VD030N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 6, 2017 00:00:00102.01 KBA2I09VD030N_MTTF_CALC

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Show All

575-1300 MHz, 4 W Avg., 48 V Airfast®Wideband Integrated RF LDMOS Amplifier

Product Details

Features

RF Performance Tables

900 MHz

700 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (3)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

A2I09VD030N 575-1300 MHz, 4 W Avg, 48 V Data Sheet[A2I09VD030N]

Package Information (2)

98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins[SOT1722-3]

98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins[SOT1722-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A2I09VD030N 575-1300 MHz, 4 W Avg, 48 V Data Sheet

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins

98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2I09VD030N RF High-Power Model AWR Product Model Design Kit

A2I09VD030N, A2I09VD030GN S-Parameters

A2I09VD030N RF High-Power Model ADS Product Model Design Kit

A2I09VD030N PCB DXF file

A2I09VD030N RF Power Electromigration MTTF Calculation Program

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575-1300 MHz, 4 W Avg., 48 V Airfast^®Wideband Integrated RF LDMOS Amplifier