575-1300 MHz, 4 W Avg., 48 V Airfast®Wideband Integrated RF LDMOS Amplifier

A2I09VD030N
The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 1300 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

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Product Details

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Features

  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 46 mA, IDQ2(A+B) = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
920 MHz34.419.9–45.0
940 MHz34.520.0–44.6
960 MHz34.319.8–44.3

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 50 mA, IDQ2(A+B) = 150 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
728 MHz30.919.6–44.7
748 MHz31.119.5–45.5
768 MHz31.219.3–46.2

Documentation

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Design Resources

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Design Files

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  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

    HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

    HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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  • Models

    A2I09VD030N RF High-Power Model AWR Product Model Design Kit

    ZIPRev 0Sep 20, 2016 00:00:005.8 MBA2I09VD030N_MDL_AWR
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  • Models

    A2I09VD030N, A2I09VD030GN S-Parameters

    S2PRev 0Dec 16, 2016 18:02:0015.8 KBA2I09VD030N-SP
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  • Models

    A2I09VD030N RF High-Power Model ADS Product Model Design Kit

    ZIPRev 1Jun 17, 2019 00:00:001.2 MBA2I09VD030N_MDL_ADS
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