575-1300 MHz, 4 W Avg., 48 V Airfast®Wideband Integrated RF LDMOS Amplifier

A2I09VD030N

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Product Details

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Features

  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 46 mA, IDQ2(A+B) = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1(A+B) = 50 mA, IDQ2(A+B) = 150 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Documentation

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Design Resources

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Design Files

1-5 of 7 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    A2I09VD030N RF High-Power Model AWR Product Model Design Kit

  • Models

    A2I09VD030N, A2I09VD030GN S-Parameters

  • Models

    A2I09VD030N RF High-Power Model ADS Product Model Design Kit

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