575-960 MHz, 6.3 W Avg., 48 V Airfast® Wideband Integrated RF LDMOS Amplifier

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Product Details

Features

  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 74 mA, IDQ2(A+B) = 240 mA, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)1. All data measured in fixture with device soldered to heatsink.

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N true 0 PSPA2I09VD050Nen 7 Application Note Application Note t789 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 2 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations 1538705978411713532657 PSP 321.1 KB None None documents None 1538705978411713532657 /docs/en/data-sheet/A2I09VD050N.pdf 321147 /docs/en/data-sheet/A2I09VD050N.pdf A2I09VD050N documents N N 2018-10-04 A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2I09VD050N.pdf /docs/en/data-sheet/A2I09VD050N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Sep 26, 2018 980000996212993340 Data Sheet Y N A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet Application Note Application Note 3 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 3 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 4 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 Technical Notes Technical Notes 1 5 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 2 6 A English 1410552037358735230752 PSP 84.9 KB None None documents None 1410552037358735230752 /docs/en/package-information/98ASA00684D.pdf 84904 /docs/en/package-information/98ASA00684D.pdf SOT1722-3 documents N N 2016-10-31 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins /docs/en/package-information/98ASA00684D.pdf /docs/en/package-information/98ASA00684D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 11, 2016 302435339416912908 Package Information D N 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins 7 A English 1410552033577709421195 PSP 80.2 KB None None documents None 1410552033577709421195 /docs/en/package-information/98ASA00630D.pdf 80216 /docs/en/package-information/98ASA00630D.pdf SOT1722-1 documents N N 2016-10-31 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins /docs/en/package-information/98ASA00630D.pdf /docs/en/package-information/98ASA00630D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins false 0 A2I09VD050N downloads en true 1 Y PSP Application Note 3 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 3 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 4 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 Data Sheet 1 /docs/en/data-sheet/A2I09VD050N.pdf 2018-10-04 1538705978411713532657 PSP 1 Sep 26, 2018 Data Sheet A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Airfast<sup>&reg;</sup> wideband integrated RFIC power amplifier for cellular base stations None /docs/en/data-sheet/A2I09VD050N.pdf English documents 321147 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2I09VD050N.pdf A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2I09VD050N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2I09VD050N 575-960 MHz, 6.3 W Avg, 48 V Data Sheet 321.1 KB A2I09VD050N N 1538705978411713532657 Package Information 2 /docs/en/package-information/98ASA00684D.pdf 2016-10-31 1410552037358735230752 PSP 6 Mar 11, 2016 Package Information None /docs/en/package-information/98ASA00684D.pdf English documents 84904 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00684D.pdf 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins /docs/en/package-information/98ASA00684D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins 84.9 KB SOT1722-3 N 1410552037358735230752 /docs/en/package-information/98ASA00630D.pdf 2016-10-31 1410552033577709421195 PSP 7 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00630D.pdf English documents 80216 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00630D.pdf 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins /docs/en/package-information/98ASA00630D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins 80.2 KB SOT1722-1 N 1410552033577709421195 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 5 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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7 documents

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Application Note (3)
Data Sheet (1)
Package Information (2)
Technical Notes (1)

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