728-960 MHz, 2.5 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

MD8IC925N

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Product Details

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    728
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    28
  • Peak Power (Typ) (dBm)
    44.9
  • Peak Power (Typ) (W)
    31
  • Die Technology
    LDMOS

RF Performance Tables

Driver Application - 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 25 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 26 Watts CW

Driver Application - 700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1(A+B) = 58 mA, IDQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

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