This 13.8 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 2300 to 2400 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 2300 to 2400 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.