Design Files
3 design files
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Models
A5G23H065N Peaking Class C S-Parameters
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Models
A5G23H065N Peaking Class AB S-Parameters
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Models
A5G23H065N Carrier S-Parameters
This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Select a section:
Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
2300 MHz | 17.3 | 61.7 | 8.3 | -27.3 |
2350 MHz | 17.3 | 60.2 | 8.4 | -28.4 |
2400 MHz | 17.1 | 58.2 | 8.4 | -29.4 |
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