2300-2690 MHz, 8.3 W Avg., 28 V Airfast® RF LDMOS Integrated Power Amplifier

A3I25D080N

The A3I25D080N and A3I25D080GN integrated Doherty circuit is designed with on-chip matching that makes it usable from 2300 to 2690 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

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Product Details

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Features

  • Integrated Doherty splitter and combiner
  • RF decoupled drain pins reduce overall board space
  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • RoHs compliant

Part numbers include: A3I25D080GN, A3I25D080N.

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ(Carrier) = 175 mA, VGS(Peaking) = 1.85 Vdc, Pout = 8.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01 % Probability on CCDF. (1)

Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
2496 MHz 29.7 36.7 -37.9
2590 MHz 29.6 37.0 -37.5
2690 MHz 29.4 36.1 -36.2

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ(Carrier) = 182 mA, VGS(Peaking) = 2.42 Vdc, Pout = 8.9 W Avg., Input Signal PAR = 9.9 dB @ 0.01 % Probability on CCDF. (1)

Frequency Gps
(dB)		 PAE
(%)		 ACPR
(dBc)
2300 MHz 30.3 36.1 -36.2
2350 MHz 30.2 35.5 -38.7
2400 MHz 30.2 35.2 -39.5

1. All data measured in fixture with device soldered to heatsink.

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Design Files

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