Design Files
2 design files
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Models
A5G26S008N S-Parameters
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Printed Circuit Boards and Schematics
A5G26S008N 2600 MHz PCB DXF file
2496-2690 MHz, 27 dBm Avg., 48 V Airfast® RF Power GaN Transistor
A5G26S008N Receive alerts
This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz.
Product Details
Features
- High terminal impedances for optimal broadband performance
- Designed for low complexity analog or digital linearization systems
- Universal broadband driver
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 2496
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- Frequency (Max) (MHz)
- 2690
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- Supply Voltage (Typ) (V)
- 48
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- Peak Power (Typ) (dBm)
- 40.3
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- Peak Power (Typ) (W)
- 10.7
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- Die Technology
- GaN
RF Performance Table
2600 MHz
Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 17 mA, Pout = 27 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2496 MHz | 19.0 | 15.8 | 10.1 | -41.0 |
| 2595 MHz | 19.4 | 16.5 | 10.1 | -42.4 |
| 2690 MHz | 18.8 | 16.4 | 9.9 | -43.6 |