2496-2690 MHz, 27 dBm Avg., 48 V Airfast® RF Power GaN Transistor

A5G26S008N

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Designed for low complexity analog or digital linearization systems
  • Universal broadband driver
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    40.3
  • Peak Power (Typ) (W)
    10.7
  • Die Technology
    GaN

RF Performance Table

2600 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 17 mA, Pout = 27 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz19.015.810.1-41.0
2595 MHz19.416.510.1-42.4
2690 MHz18.816.49.9-43.6
1. All data measured in reference circuit with device soldered to printed circuit board.

Documentation

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4 documents

Design Resources

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Design Files

2 design files

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