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Product Details

Features

  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    100
  • Frequency (Max) (MHz)
    3600
  • Supply Voltage (Typ) (V)
    28
  • Die Technology
    LDMOS

RF Performance Tables

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

2600 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 2.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Documentation

Quick reference to our documentation types.

5 documents

Design Resources

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Design Files

1-5 of 9 design files

  • Models

    AFT20S015N RF High-Power Model ADS Product Model Design Kit

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    AFT20S015N RF High-Power Model AWR Product Model Design Kit

  • Models

    AFT20S015NR1, AFT20S015GNR1 S-Parameters

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