1800-2200 MHz, 36 W Avg., 48 V Airfast® RF Power GaN Transistor

A2G22S190-01S

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1800
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    52.6
  • Peak Power (Typ) (W)
    182
  • Die Technology
    GaN

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 200 mA, Pout = 36 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz16.536.27.1–33.8–6
1990 MHz17.337.26.9–33.2–11
2170 MHz16.838.56.7–32.6–7

Documentation

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5 documents

Design Resources

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Design Files

2 design files

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