Design Files
2 design files
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Models
A2G22S190-01S S-Parameters
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Printed Circuit Boards and Schematics
A2G22S190-01S 2000 MHz PCB DXF file
1800-2200 MHz, 36 W Avg., 48 V Airfast® RF Power GaN Transistor
A2G22S190-01S Receive alerts
The A2G22S190-01S 36 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-400S-2S Package Image
Product Details
Features
- High terminal impedances for optimal broadband performance
- Designed for digital predistortion error correction systems
- Optimized for Doherty applications
- RoHS compliant
RF Performance Table
2000 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 200 mA, Pout = 36 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 16.5 | 36.2 | 7.1 | –33.8 | –6 |
| 1990 MHz | 17.3 | 37.2 | 6.9 | –33.2 | –11 |
| 2170 MHz | 16.8 | 38.5 | 6.7 | –32.6 | –7 |
Documentation
Quick reference to our documentation types.
5 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins