The A3G20S250-01S 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 17.6 | 34.8 | 6.9 | –35.1 | –10 |
| 1990 MHz | 17.9 | 37.2 | 7.0 | –34.4 | –8 |
| 2170 MHz | 18.2 | 37.0 | 6.9 | –34.1 | –10 |
|
|
|
|
|
|
|
|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Quick reference to our documentation types.
2 design files
Receive the full breakdown. See the product footprint and more in the eCad file.