1800-2200 MHz, 45 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G20S250-01S

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1800
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    53.8
  • Peak Power (Typ) (W)
    240
  • Die Technology
    GaN

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 250 mA, Pout = 45 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz17.634.86.9–35.1–10
1990 MHz17.937.27.0–34.4–8
2170 MHz18.237.06.9–34.1–10

Design Resources

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Documentation

Quick reference to our documentation types.

4 documents

Design Files

2 design files

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