1800-2200 MHz, 79 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G22H400-04S

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1800
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    56
  • Peak Power (Typ) (W)
    400
  • Die Technology
    GaN

RF Performance Tables

2100 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5.4 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz15.456.67.1–33.1
2140 MHz15.456.67.1–34.9
2170 MHz15.456.67.1–34.9
2200 MHz15.356.57.0–34.5

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5.5 Vdc, Pout = 89 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz15.156.07.0–31.1
1840 MHz15.656.57.1–31.8
1880 MHz15.158.77.0–30.8
1. All data measured in fixture with device soldered to heatsink.

Design Resources

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Documentation

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4 documents

Design Files

4 design files

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