1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

MRF7S18170H

See product image

Product Details

Select a section:

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 17.5 dB
    Drain Efficiency: 31%
    Device Output Signal PAR:  6.2 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW Peak Tuned Output Power
  • Pout @ 1 dB Compression Point ≥ 170 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Documentation

Quick reference to our documentation types.

3 documents

Design Resources

Select a section:

Design Files

5 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRF7S18170H, MRF7S18170HS RF High-Power Model ADS Product Model Design Kit

  • Models

    MRF7S18170H, MRF7S18170HS RF High-Power Model AWR Product Model Design Kit

  • Calculators

    MRF7S18170HR3, MRF7S18170HSR3 RF Power Electromigration MTTF Calculation Program

Support

What do you need help with?