A5G18H610W19N|1805–1880 MHz, 85 W Avg, 48 V

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Roll over image to zoom in

This A5G18H610W19N 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1805 to 1880 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Plastic package
RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 300 mA, V_GSB = -5.4 Vdc, P_out = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	17.3	55.8	8.4	–32.3
1840 MHz	17.5	55.6	8.6	–34.7
1880 MHz	17.4	54.1	8.5	–33.7

1. All data measured with device soldered in NXP reference circuit.

Buy/Parametrics

‌ ‌ ‌	‌ ‌	‌ ‌	‌ ‌	‌ ‌	‌ ‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌

Documentation

Quick reference to our documentation types.

4 documents

Data Sheet
A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet

PDFRev 1Dec 21, 2023231.5 KBA5G18H610W19NEnglish
Application Note
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
Application Note
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
Fact Sheet
RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet

PDFRev 0May 16, 20241.4 MBMACROGANFSEnglish

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A5G18H610W19N Peaking Class C S-Parameters

S2PRev 0Oct 9, 2023 11:00:00127.9 KBA5G18H610W19N-Peaking-Class-C

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A5G18H610W19N Carrier Class AB S-Parameters

S2PRev 0Oct 9, 2023 10:52:00127.9 KBA5G18H610W19N-Carrier-Class-AB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A5G18H610W19N Peaking Class AB S-Parameters

S2PRev 0Oct 9, 2023 10:56:00127.9 KBA5G18H610W19N-Peaking-Class-AB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Printed Circuit Boards and Schematics
A5G18H610W19N 1800 MHz PCB DXF file

ZIPRev 0Oct 9, 2023 11:07:00907.7 KBA5G18H610W19N-1800-PCB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Design Files - miscellaneous
A5G18H610W19N 1805-1880 MHz Design Files

ZIPRev 0Jan 24, 2024 13:31:00850.3 KBA5G18H610W19N-DESIGN-FILES

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue

1805-1880 MHz, 85 W Avg., 48 V Airfast^® RF Power GaN Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet

Design Resources

Design Files

Filter by

A5G18H610W19N Peaking Class C S-Parameters

A5G18H610W19N Carrier Class AB S-Parameters

A5G18H610W19N Peaking Class AB S-Parameters

A5G18H610W19N 1800 MHz PCB DXF file

A5G18H610W19N 1805-1880 MHz Design Files

Filter By

Support

What do you need help with?

Suggested Links

1805-1880 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

A5G18H610W19N 1805–1880 MHz, 85 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet

Design Resources

Design Files

Filter by

A5G18H610W19N Peaking Class C S-Parameters

A5G18H610W19N Carrier Class AB S-Parameters

A5G18H610W19N Peaking Class AB S-Parameters

A5G18H610W19N 1800 MHz PCB DXF file

A5G18H610W19N 1805-1880 MHz Design Files

Filter By

Support

What do you need help with?

Suggested Links

1805-1880 MHz, 85 W Avg., 48 V Airfast^® RF Power GaN Transistor