1805-1880 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

A5G18H610W19N

Roll over image to zoom in

Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Plastic package
  • RoHS compliant

Part numbers include: A5G18H610W19N.

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = -5.4 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

Documentation

Quick reference to our documentation types.

4 documents

Design Resources

Design Files

4 design files

Support

What do you need help with?