1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T18H100-25S

See product image

Product Details

Select a section:

Features

  • Advanced High Performance In-Package Doherty
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 230 mA, VGSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

1900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 210 mA, VGSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Documentation

Quick reference to our documentation types.

4 documents

Design Resources

Select a section:

Design Files

1-5 of 9 design files

  • Models

    A2T18H100-25S RF High-Power Model AWR Product Model Design Kit

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    A2T18H100-25SR3 S-Parameters

  • Models

    A2T18H100-25SR3 S-Parameters

Show All

Support

What do you need help with?