1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T18H100-25S
The A2T18H100-25SR3 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.

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Product Details

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Features

  • Advanced High Performance In-Package Doherty
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1995
  • Supply Voltage (Typ) (V)
    28
  • Peak Power (Typ) (dBm)
    50.5
  • Peak Power (Typ) (W)
    112
  • Die Technology
    LDMOS

RF Performance Tables

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 230 mA, VGSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1805 MHz18.150.27.7–31.0
1840 MHz18.249.67.8–33.0
1880 MHz18.149.87.9–34.4

1900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 210 mA, VGSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1930 MHz18.851.08.1–31.3
1960 MHz18.750.27.9–32.7
1990 MHz18.650.17.8–33.3

Design Resources

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